POWER FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Method for manufacturing electronic devices on a semiconductor substrate (1, 1a; 10, 11) with wide band gap comprising the steps of: forming a screening structure (3a, 20) on said semiconductor substrate (1, 1a; 10, 11) comprising at least a dielectric layer (2, 20) which leaves a plurality of areas of said semiconductor substrate (1, 1a; 10, 11) exposed, carrying out at least a ion implantation of a first type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a first implanted region (4, 40), carrying out at least a ion implantation of a second type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a second implanted region (6, 6c; 60, 61) inside said at least a first implanted region (4, 40), carrying out an activation thermal process of the first type and second type of dopant with low thermal budget suitable to complete said formation of said at least first and second implanted regions (4, 40; 6, 60).