发明名称 Method for protection of delicate nano-structures from scratching, e.g. for silicon wafers, involves application of spin-on-glass in several discrete steps
摘要 <p>A method for protection of a layer, which consists of needle-shaped silicon peaks with a large aspect-ratio of 4:1 and larger with nanometer dimensions. A spin-on-glass is applied in several steps and in its properties meets the requirements matched to passivating layer and following each application is tempered until a smooth surface is formed.</p>
申请公布号 DE102005048363(A1) 申请公布日期 2007.04.12
申请号 DE20051048363 申请日期 2005.10.10
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG 发明人 BACH, KONRAD;GAEBLER, DANIEL
分类号 B82B3/00;H01L21/316;H01L23/29 主分类号 B82B3/00
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