发明名称 |
Method for protection of delicate nano-structures from scratching, e.g. for silicon wafers, involves application of spin-on-glass in several discrete steps |
摘要 |
<p>A method for protection of a layer, which consists of needle-shaped silicon peaks with a large aspect-ratio of 4:1 and larger with nanometer dimensions. A spin-on-glass is applied in several steps and in its properties meets the requirements matched to passivating layer and following each application is tempered until a smooth surface is formed.</p> |
申请公布号 |
DE102005048363(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
DE20051048363 |
申请日期 |
2005.10.10 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
BACH, KONRAD;GAEBLER, DANIEL |
分类号 |
B82B3/00;H01L21/316;H01L23/29 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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