发明名称 |
PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS |
摘要 |
<p>A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO<SUB>2</SUB>. A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.</p> |
申请公布号 |
WO2007040834(A2) |
申请公布日期 |
2007.04.12 |
申请号 |
WO2006US31773 |
申请日期 |
2006.08.15 |
申请人 |
TOKYO ELECTRON LIMITED;LEE, ERIC, M.;TOMA, DOREL, I. |
发明人 |
LEE, ERIC, M.;TOMA, DOREL, I. |
分类号 |
H01L21/31;H01L21/20;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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