发明名称 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS
摘要 <p>A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO&lt;SUB&gt;2&lt;/SUB&gt;. A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.</p>
申请公布号 WO2007040834(A2) 申请公布日期 2007.04.12
申请号 WO2006US31773 申请日期 2006.08.15
申请人 TOKYO ELECTRON LIMITED;LEE, ERIC, M.;TOMA, DOREL, I. 发明人 LEE, ERIC, M.;TOMA, DOREL, I.
分类号 H01L21/31;H01L21/20;H01L21/469 主分类号 H01L21/31
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