| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accurately adjust a wide range of adjustment of a resistance in a semiconductor device comprising a resistive circuit with a plurality of metallic thin film resistive elements connected in series therein. <P>SOLUTION: The semiconductor device comprises the plurality of metallic thin films R1, R2, and R3 with the value of the resistance adjusted through cutting or a change in quality by a laser beam irradiation. The relations among the ranges of adjustment of the resistance valueΔR1,ΔR2, andΔR3 of the metallic thin film resistive elements R1, R2, and R3; a total adjustment range of the value of the resistanceΔR0(=ΔRa+ΔRb+ΔRc); and adjusting accuracies of the value of the resistances R1_step, R2_step, and R3_step satisfy the following relational exressions:ΔR2≥R1_step,ΔR3≥R2_step, R3_step≤0.001×ΔR0<R2_step≤0.01×ΔR0<R1_step≤0.1×ΔR0. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
