| 摘要 |
PROBLEM TO BE SOLVED: To provide a diamond power semiconductor device for suppressing a reverse leakage current, and to provide a method of manufacturing the diamond power semiconductor device. SOLUTION: The diamond power semiconductor device comprises an electrode, and a substrate having a diamond thin film. In the diamond power semiconductor device, a device region is formed on a non-epitaxial film, and the diamond thin film without any abnormal growth regions of a growth hill-like hillock. Crystal defects, such as the abnormal growth particle and growth hill of the epitaxial diamond thin film, are inspected, and are avoided for forming a pattern for the electrode. COPYRIGHT: (C)2007,JPO&INPIT |
