| 摘要 |
PROBLEM TO BE SOLVED: To increase effective area efficiency and to enhance thermal-stress resistance nature of bonded portions. SOLUTION: The semiconductor device to be disclosed has an active element formed in a predetermined area of a semiconductor substrate 60. Electrodes for external connection to be connected to electrode pads of the active element are isolated from the substrate, or are block pieces formed from another semiconductor substrate. The block pieces and the active element are mutually connected via a wiring board or a semiconductor substrate 100 in which another active element is formed, or by direct bonding. Bump electrodes 121, 131 are respectively formed on the block pieces and on electrode pads of the active elements which are to be bonded to the block pieces, or on a circuit pattern formed on the wiring board or on the other semiconductor substrate. On each surface of the bump electrodes 121, 131, a barrier metal film 123, 132 and a bonding metal 123, 133 are formed in a stacked form, and the bump electrodes are properly bonded to each other by the bonding metal 123, 133 formed on the barrier metal film 122, 132. COPYRIGHT: (C)2007,JPO&INPIT |
