| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory which enhances reliability by increasing the coupling rate of an inter-gate insulation film to increase the voltage induced to a floating gate. SOLUTION: The nonvolatile memory is provided with a common source region 400 etc. in an active region limited by an element isolation film 155 on a semiconductor substrate 100. A tunneling insulating film 130 made of oxide films is provided on the semiconductor substrate 100 of the active region. And a control gate 600 covers two or more floating gates 255 simultaneously, and can control the plurality of floating gates 255. And the control gate 600 is formed so as to be overlaid on a common source line 400 between the floating gates 255 so arranged that they are opposed to each other. COPYRIGHT: (C)2007,JPO&INPIT
|
