| 摘要 |
PROBLEM TO BE SOLVED: To suppress the temperature rise of a deposition substrate, and to reduce membrane stress in a formed film by controlling high frequency power and a self bias voltage independently to an arbitrary value in cathode-coupling plasma CVD equipment. SOLUTION: A low pass filter coil and a variable resistor are connected in series between a cathode electrode and a coupling capacitor and grounded. Consequently, the self bias voltage is reduced without decreasing the high frequency voltage. Accordingly, it becomes possible to prevent the temperature rise of the deposition substrate, and to form a low stress film while keeping plasma density as high as that of a conventional cathode-coupling plasma CVD. COPYRIGHT: (C)2007,JPO&INPIT
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