| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves the driving capacity of a PMOSFET in a CMOSFET using a gate insulating film having a high dielectric constant, and also to provide a manufacturing method for the semiconductor device. SOLUTION: First gate-electrode side-wall insulating films 150A and 150B are formed on the side faces of first insulating films 100A and 100B, while second gate-electrode side-wall insulating films 160A and 160B are formed on the side faces of a second gate electrode 80 and the second gate insulating film 60. Consequently, a step forming an interface insulating film 170 is formed on an interface between the second gate electrode 80 and the second gate insulating film 60. COPYRIGHT: (C)2007,JPO&INPIT
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