| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, exhibiting high element reliability and proper polarization characteristics by forming a support portion after the formation of ridge, thereby optimizing the profile of the support portion. SOLUTION: The semiconductor laser element, having a ridge 1 above an active layer 14, a support layer 2 having a recess 2a at least above the ridge 1 and protruding support portions 2b on the opposite sides of the recess 2a, is formed to cover at least the ridge 1. In the production process, current block layers 17 and 18 are formed by epitaxial growth, following to formation of the ridge 1 excepting the upper surface of the ridge 1, the support layer 2 is formed by next epitaxial growth, and then the recess 2a is formed by etching. COPYRIGHT: (C)2007,JPO&INPIT
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