SUBSTRATE FOR COMPOUND SEMICONDUCTOR DEVICE, AND COMPOUND SEMICONDUCTOR DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To provide a substrate for a compound semiconductor device having a higher breakdown voltage and a lower energy loss and suitably used for a high electron mobility transistor etc. and to provide a compound semiconductor device using it. SOLUTION: An n-type 3C-SiC single crystal buffer layer 3 of 1016-1021/cm3carrier concentration, a hexagonal GaxAl1-xN single crystal buffer layer (0≤x<1) 4, an n-type hexagonal GayAl1-yN single crystal layer (0.2≤y≤1) 5 of 1011-1016/cm3carrier concentration, and an n-type hexagonal GazAl1-zN single crystal carrier supplying layer (0≤z≤0.8, 0.2≤y-z≤1) 6 of 1011-1016/cm3carrier concentration are sequentially laminated on an n-type Si single crystal substrate 2 of ä111} crystal plane orientation and 1016-1021/cm3carrier concentration. A back electrode 7 is formed on the backside of the substrate 2, and a surface electrode 8 is formed on the surface of the carrier supplying layer 6. COPYRIGHT: (C)2007,JPO&INPIT