METHOD OF FORMING METAL WIRING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a metal wiring structure. SOLUTION: A method of forming a metal wiring structure comprises: a step of sequentially forming a first insulating layer and a second insulating layer on a semiconductor substrate; a step of selectively etching the second insulating layer and the first insulating layer in sequence to define a contact hole; a step of forming a first metal layer extending on the second insulating layer and into the contact hole; a step of patterning the first metal layer to expose the second insulating layer; a step of selectively etching the second insulating layer by using the patterned first metal layer as an etching mask for sufficient duration to expose the first insulating layer and a metal plug in the contact hole; a step of filling a seam within the exposed metal plug with a conductive filler material; and a step of forming a second metal layer on the metal plug. This method can reduce metal defects (such as a short circuit in metal wiring) that may degrade a device yield after back-end processing steps have been completed. COPYRIGHT: (C)2007,JPO&INPIT