| 摘要 |
<p>A beam exposure writing strategy method and system are disclosed for exposing a desired pattern on a substrate, by raster scanning a beam such as a particle beam, across a major field on the substrate. The beam is also vector scanned across a minor field of the substrate superimposed along the major field raster scan. The beam is selectively blanked and unblanked as the beam is being scanned. The unblanked flashes of the beam are modulated in coordination with the raster and vector scanning to expose the desired pattern on the substrate. The disclosed system and method generating an adjustable length microvector having a maximum range of at least about N time a nominal length ?, where N is equal to four and ? is substantially equal to a dimension of a nominal flash area, the nominal flash location dimension being substantially greater than a major field cell dimension.</p> |
