SILICON GERMANIUM SEMICONDUCTIVE ALLOY AND METHOD OF FABRICATING SAME
摘要
<p>A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al<SUB>2</SUB>O<SUB>3</SUB>. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.</p>
申请公布号
WO2007040496(A1)
申请公布日期
2007.04.12
申请号
WO2005US34414
申请日期
2005.09.28
申请人
U.S.A. AS REPRESENTED BY THE ADMINISTRATOR OF THENATIONAL AERONAUTICS & SPACE ADMINISTRATION;PARK, YEONJOON;CHOI, SANG, H.;KING, GLEN, C.