| 摘要 |
<p>A method for the singulation of integrated circuit die, the method including: etching a semiconductor layer disposed on a silicon oxide dielectric layer, thereby forming a trench defining a boundary of the die; depositing a silicon nitride layer in the trench; coating the semiconductor layer with an oxide layer such that the trench is filled; removing part of the oxide layer from the semiconductor layer such that the oxide layer only remains in the trench; mounting the semiconductor layer to a carrier; removing the silicon oxide dialectic layer, the nitride layer, and the oxide layer; and releasing the die from the carrier. The method is suitable for irregularly shaped or extremely small die and is compatible with traditional CMOS processes.</p> |
