| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask aligning method not affected by epitaxial growth. <P>SOLUTION: Upon forming a plurality of elements on a semiconductor substrate 1 with a circular substrate surface by implementing a plurality of steps including at least an epitaxial growth step and a device step thereafter, a laser mark 2 is formed at a reference position of mask alignment in the device step before the epitaxial growth step, and the mask alignment is performed taking the laser mark 2 as a reference in the device step after the epitaxial growth step. <P>COPYRIGHT: (C)2007,JPO&INPIT |
