| 摘要 |
PROBLEM TO BE SOLVED: To improve element characteristics by inhibiting the charging damage of a ferroelectric capacitor, and achieving excellent ferroelectric characteristics while adopting a damascene structure in a multilayer interconnection. SOLUTION: A semiconductor storage device has a memory cell composed of the ferroelectric capacitor 12 formed by holding a ferroelectric film 112 by a lower electrode 111 and an upper electrode 113, and a transistor 11 for a switching on a semiconductor substrate 100. In the storage device, a first wiring 121a connected to the upper electrode 113 for the ferroelectric capacitor 12 is formed by a processing after a wiring material is deposited, and a second wiring 124a by a damascene process is formed on the first wiring 121a. COPYRIGHT: (C)2007,JPO&INPIT
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