| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device from which data can be stably read out even for a memory cell of a normal bit line adjoining a dummy bit line. <P>SOLUTION: The nonvolatile semiconductor memory device having a dummy bit line structure where data reading accuracy of memory cells is improved is disclosed. This nonvolatile semiconductor memory device comprises the normal bit line and the dummy bit line. The dummy bit line has a plurality of dummy bit line parts. Moreover, the nonvolatile semiconductor memory device comprises a common source line and a well. A part of a plurality of the dummy bit line parts is connected to the common source line, and another part of a plurality of the dummy bit line parts is connected to the well. Thereby in this nonvolatile semiconductor memory device, data of the memory cell to be selected can be stably read out even for the memory cell of the normal bit line adjoining the dummy bit line. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
