| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition which is capable of forming a silicone-based film that is usable suitably as an interlayer insulation film in a semiconductor element or the like and has an appropriate uniform thickness and besides is excellent in the dielectric constant characteristics and film strength, and to provide an insulation film and also a manufacturing method thereof. SOLUTION: The composition for use in film formation contains a compound which has m numbers of RSi(O<SB>0.5</SB>)<SB>3</SB>units (wherein, m is an integer of 8-16; and R is a nonhydrolyzable group) and besides which forms a cage structure as the result that each one of units shares an oxygen atom in each one of units and thus connects to another unit, and/or contains a reaction product thereof. COPYRIGHT: (C)2007,JPO&INPIT
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