| 发明名称 |
III-NITRIDE SEMICONDUCTOR FABRICATION |
| 摘要 |
<p>A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.</p> |
| 申请公布号 |
WO2007041595(A2) |
申请公布日期 |
2007.04.12 |
| 申请号 |
WO2006US38678 |
申请日期 |
2006.10.03 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION;HE, ZHI;BEACH, ROBERT |
发明人 |
HE, ZHI;BEACH, ROBERT |
| 分类号 |
H01L21/28;H01L21/3205 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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