发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition capable of ensuring satisfactory improvement of sensitivity, exposure latitude and pattern collapse, in a process of producing a semiconductor such as IC and in production of a circuit board of a liquid crystal, a thermal head or the like, and a pattern forming method using the positive resist composition. <P>SOLUTION: The positive resist composition comprises (A) a resin including a cyclic sulfonamide partial structure represented by formula (S1), and having solubility in an alkali developer increased by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007093910(A) 申请公布日期 2007.04.12
申请号 JP20050282114 申请日期 2005.09.28
申请人 FUJIFILM CORP 发明人 IWATO KAORU
分类号 G03F7/039;C08F20/38;H01L21/027 主分类号 G03F7/039
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