| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern processing method with which sufficient etching resistance of a resist film is ensured without scanning with an ultraviolet laser beam. <P>SOLUTION: An object to be processed, which has two layers comprising a first resist film and a second resist film with photosensitive characteristics different from those of the first resist film laminated on its surface in this order, is prepared. A latent image is formed with direct drawing on the second resist film by using light with a wavelength region which the second resist film is exposed. The second resist film is developed. A latent image is formed on the first resist film by irradiating its entire surface with light with a wavelength region which the first resist film is exposed by using the second resist film remaining on the first resist film as a mask. The first resist film is developed. The surface of the object to be processed is processed by using the first resist film remaining on the surface of the object to be processed as a mask. <P>COPYRIGHT: (C)2007,JPO&INPIT |
