| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current generated in a buffer layer by raising the resistor of the buffer layer without deteriorating current collapse. SOLUTION: This HEMT1 comprises a low-temperature buffer layer 3, a buffer layer 4, an electron transit layer 5, and an electron supply layer 6, each of which consists of GaN compound semiconductor, which are laminated on a substrate 2 in the above sequence. The electron supply layer 6 is equipped with a source electrode 7S, a gate electrode 7G, and a drain electrode 7D. The dislocation density of the buffer layer 4 has a density value at which the volume resistivity to the dislocation density nears the maximum value. Meanwhile, the half-value width of an X-ray rocking curve to the field (102) of the buffer layer 4 has a half-value width in which the volume resistivity to the half-value width nears the maximum value. COPYRIGHT: (C)2007,JPO&INPIT
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