发明名称 |
Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
摘要 |
A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low defect regions; and forming a cut-out at a specific location along the edge of the nitride semiconductor substrate, using as a reference the direction in which at least one from among the plurality of striped regions extends.
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申请公布号 |
US2007080366(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060516518 |
申请日期 |
2006.09.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIURA TAKAYUKI;MEZAKI YOSHIO |
分类号 |
H01L21/00;H01L21/02;H01L21/304;H01L29/24 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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