THIN FILM TRANSISTOR ARRAY SUBSTRATE FABRICATION METHOD AND THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

In a first process step, a gate electrode (4a) is formed. Subsequently, in a second process step, a gate insulating film (5), a semiconductor film (8), and a conductive film (12) including a transparent conductive film (9) are stacked to form a stacked body (18). On the stacked body (18), a resist pattern (13a) is formed with a first opening (14a) exposing the conductive film (12) and a second opening (14b) having a bottom (B) above the gate electrode (4a). Then, the conductive film (12) exposed from the first opening (14a) and the semiconductor film (8) are both etched, and the bottom (B) of the second opening (14b) is removed to expose the conductive film (12), which is etched to form a TFT (20). In a third process step, a pixel electrode (5a), a protective light shielding layer (17a), and a protrusion (17b) are formed.