| 摘要 |
<p>A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H<SUB>2</SUB>, an oxygen-containing gas, and a halogen- containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatmospheric pressure, and forming an oxide layer through thermal oxidization of the substrate by the process gas. According to one embodiment of the invention, the substrate can be maintained at a temperature between about 150°C and about 900°C. A microstructure containing an oxide layer is described, where the oxide layer can be a gate dielectric oxide layer or an interface oxide layer integrated with a high-k layer.</p> |
