| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a high purity indium metal having high purity, having extremely low tin (Sn) grade and lead (Pb) grade in particular, and suitable as an electronic component material and an ITO target material. <P>SOLUTION: The a method for producing the high purity indium metal film is a solution treatment method where alkali is added to an indium-containing acid solution comprising≥0.2 mg/L cadmium (Cd) to regulate its pH, an oxidation-reduction potential regulator is added thereto to regulate its oxidation-reduction potential, and, thereafter, a sulfurizing agent is added thereto to precipitate away the ions of the metals other than indium, thus an electrolysis original solution is obtained, and comprises a process where an electrolytic original solution is prepared by the solution treatment method. The high purity indium metal for the electronic component is characterized in that the content of tin (Sn) is <0.1 mass ppm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
