| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor substrate provided with SiC which is controlled in generation of crystal defect due to misfit dislocation and is reduced in warpage thereof. SOLUTION: The semiconductor substrate 10 is manufactured by forming an Si<SB>1-X</SB>Ge<SB>X</SB>layer 13 on the front surface of an Si substrate 12 after removing therefrom a naturally oxidized film 12a, forming subsequently an Si<SB>1-X-Y</SB>Ge<SB>X</SB>C<SB>Y</SB>layer 14 by carbonating the Si<SB>1-X</SB>Ge<SB>X</SB>layer 13, and then forming a 3C-SiC layer 16 on the front surface of the Si<SB>1-X-Y</SB>Ge<SB>X</SB>C<SB>Y</SB>layer 14 with the hetero-epitaxial growth. COPYRIGHT: (C)2007,JPO&INPIT
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