| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing the total off-leakage current of the semiconductor memory device by controlling a bulk bias voltage for a column decoder. SOLUTION: The column decoder contains a free driving unit for receiving code signals including column address information, outputting enable signals when the code signals match in an enable state during a column access operation and outputting disable signals when the code signals do not match, and a driving unit for activating column selection signals when the enable signals are outputted from the free driving unit and inactivating the column selection signals when the disable signals are outputted from the free driving unit. A pumping voltage higher than a power supply voltage is applied to the bulk bias voltage of the PMOS transistor of the free driving unit and the driving unit, and a back-bias voltage lower than a ground voltage is applied to the bulk bias voltage of an NMOS transistor. COPYRIGHT: (C)2007,JPO&INPIT
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