摘要 |
PROBLEM TO BE SOLVED: To provide a precharge circuit for a local input/output line of a semiconductor memory. SOLUTION: Semiconductor memory has banks having cell blocks, a first local input/output line for transmitting the data stored in a first cell block of the bank according to a first data output mode, a second local input/output line for transmitting the data stored in a second cell block of the bank according to the first data output mode and second data output mode, a first precharge section to precharge the first local input/output line, a second precharge section to precharge the second local input/output line, and a control signal generator circuit to precharge the first cell block and the second cell block in the first data output mode and to precharge the second cell block in the second data output mode. COPYRIGHT: (C)2007,JPO&INPIT
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