Semiconductor memory device with a capacitor formed therein and a method for forming the same

摘要

To integrate a capacitor device ( 40 ) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device ( 43 ) and an upper electrode device ( 44 ) of the capacitor device ( 40 ) are provided to be formed directly underneath or directly above the material region ( 30 ) which has the memory elements ( 20 ), in such a way that as a result at least a part of the material region ( 30 ) which has the memory elements ( 20 ) functions at least as part of the respective dielectric ( 45 ) between the electrode devices ( 43, 44 ).