| 发明名称 |
Maske und Verfahren zum Strukturieren eines Halbleiterwafers |
| 摘要 |
A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer. |
| 申请公布号 |
DE10305617(B4) |
申请公布日期 |
2007.04.12 |
| 申请号 |
DE2003105617 |
申请日期 |
2003.02.11 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GUTMANN, ALOIS;LU, ZHIJIAN;BUTT, SHAHID |
| 分类号 |
G03F1/00;G03F1/30;G03F1/36;G03F7/20;G03F7/207 |
主分类号 |
G03F1/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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