发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide an input and output line sense amplifier to detect and amplify the data on the input/output line. SOLUTION: This semiconductor memory has a first input and output line, an input and output line first sense amplifier connected to the first input and output line to respond to the input of a 1st sese amplifier control signal and to amplify the signals on the 1st input and output line, an input and output line second sense amplifier to respond to the input of a second sese amplifier control signal and to amplify the output signal of the first sense amplifier, and a disabling means to respond to the output signals of the second sense amplifier and to disable the input of the first sense amplifier control signal to the 1st sense amplifier. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007095254(A) 申请公布日期 2007.04.12
申请号 JP20060180488 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC 发明人 HA SUNG JOO
分类号 G11C11/409;G11C11/419 主分类号 G11C11/409
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