发明名称 Method For Filling Of Nanoscale Holes And Trenches And For Planarizing Of A Wafer Surface
摘要 A processing method for use in the fabrication of fabrication of nanoscale electronic, optical, magnetic, biological, and fluidic devices and structures, for filling nanoscale holes and trenches, for planarizing a wafer surface, or for achieving both filling and planarizing of a wafer surface simultaneously. The method has the initial step of depositing a layer of a meltable material on a wafer surface. The material is then pressed using a transparent mold while shining a light pulse through the transparent mold to melt the deposited layer of meltable material. A flow of the molten layer material fills the holes and trenches, and conforms to surface features on the transparent mold. The transparent mold is subsequently removed.
申请公布号 US2007082457(A1) 申请公布日期 2007.04.12
申请号 US20060533323 申请日期 2006.09.19
申请人 发明人 CHOU STEPHEN Y.;CUI BO;KEIMEL CHRISTOPHER F.
分类号 H01L21/76 主分类号 H01L21/76
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