发明名称 |
HIGH THROUGHPUT CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL FILM PLANARIZATION |
摘要 |
A chemical mechanical polishing process including a single Step I CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.
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申请公布号 |
WO2007019342(A3) |
申请公布日期 |
2007.04.12 |
申请号 |
WO2006US30508 |
申请日期 |
2006.08.07 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;BOGGS, KARL;DARSILLO, MICHAEL;WRSCHKA, PETER;WELCH, JAMES |
发明人 |
BOGGS, KARL;DARSILLO, MICHAEL;WRSCHKA, PETER;WELCH, JAMES |
分类号 |
H01L21/302;H01L21/461;H01L21/463 |
主分类号 |
H01L21/302 |
代理机构 |
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地址 |
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