| 摘要 |
A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber while maintaining the interior of the vacuum chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window which faces a substrate placed on a substrate electrode in the vacuum. Plasma is generated in the vacuum chamber to process the substrate or a film on the substrate. Particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate. |
