| 发明名称 |
METHOD OF USING TITANIUM DOPED ALUMINUM OXIDE FOR PASSIVATION OF FERROELECTRIC MATERIALS AND DEVICES INCLUDING THE SAME |
| 摘要 |
<p>A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir-Ta-O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient</p> |
| 申请公布号 |
KR100706015(B1) |
申请公布日期 |
2007.04.11 |
| 申请号 |
KR20020016747 |
申请日期 |
2002.03.27 |
| 申请人 |
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发明人 |
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| 分类号 |
G02F1/03;H01L27/105;H01L21/00;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/108;H01L29/788;H01L29/792;H01L37/02;H01L41/09;H01L41/22 |
主分类号 |
G02F1/03 |
| 代理机构 |
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