MULTI-CHIP SEMICONDUCTOR MEMORY DEVICE HAVING INTERNAL POWER VOLTAGE GENERATING CIRCUIT WITH REDUCING CURRENT CONSUMPTION,申请号KR20050093662-传众专利搜索

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发明名称	MULTI-CHIP SEMICONDUCTOR MEMORY DEVICE HAVING INTERNAL POWER VOLTAGE GENERATING CIRCUIT WITH REDUCING CURRENT CONSUMPTION
摘要
申请公布号	KR20070038586(A)	申请公布日期	2007.04.11
申请号	KR20050093662	申请日期	2005.10.06
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KWON, OH SUK;BYEON, DAE SEOK
分类号	G11C5/14	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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