| 摘要 |
An inspection method for a thin-film device and a production method for a semiconductor device, wherein an inspection can be carried out efficiently on a wafer for film thickness, or CMP process residue, through-hole work residue or the like by enabing positions for the above inspections to be determined properly and in a short time. A method of inspecting the thickness of an optically-transparent thin film formed on the surface of a thin-film device in the middle of a thin-film device producing process, wherein a position at which the thickness of an optically-transparent thin film is to be controlled is set in advance by using film-thickness information obtained by measuring the thickness of the optically-transparent thin film or by simulation using design information on the thin-film device, and the thickness of the optically-transparent thin film at this set position is determined by detecting the reflection light of a light applied onto this thin film. The determined film-thickness value is compared with a preset control value to thereby inspect the thickness of the optically-transparent thin film. |
