Versatile system for limiting electric field degradation of semiconductor structures

摘要

The present invention provides a system for limiting degradation of a first semiconductor structure ( 304 ) caused by an electric field ( 314 ), generated from within the semiconductor substrate ( 302 ) by high voltage on a second semiconductor structure ( 310 ). A semiconductor device ( 300 ) is adapted to reduce the effective magnitude of the field-as realized at structure 304 -to some fractional component ( 320 ), or to render the angle ( 322 )-at which the field approaches the first structure through a first substrate region ( 306 )-acute. Certain embodiments of the present invention provide for: lateral recession of the first semiconductor structure to abut an isolation structure ( 312 ), which is disposed between the second semiconductor structure and the first substrate region; lateral recession of the first semiconductor structure from the isolation structure, so as to form a moat therebetween; and a counter-doped region ( 316 ) within the first substrate region.