发明名称 |
Method of forming uniform ultra-thin oxynitride layers |
摘要 |
Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
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申请公布号 |
US7202186(B2) |
申请公布日期 |
2007.04.10 |
申请号 |
US20030630970 |
申请日期 |
2003.07.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) |
发明人 |
O'MEARA DAVID L;WAJDA CORY;DIP ANTHONY;TOELLER MICHAEL;FURUKAWA TOSHIHARA;SCHEER KRISTEN;CALLEGARI ALESSANDRO;BUEHRER FRED;ZAFAR SUFI;GOUSEV EVGENI;CHOU ANTHONY;HIGGINS PAUL |
分类号 |
H01L21/31;C23C16/30;H01L21/00;H01L21/28;H01L21/314;H01L21/316;H01L21/469;H01L29/51 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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