发明名称 METHOD FOR MANUFACTURING VERTICAL STRUCTURE LIGHT EMITTING DIODE
摘要 There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.
申请公布号 KR20070038272(A) 申请公布日期 2007.04.10
申请号 KR20050093409 申请日期 2005.10.05
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 HWANG, HAE YOUN;RYU, YUNG HO;SHIM, DA MI;AHN, SE HWAN
分类号 H01L33/32;H01L33/44 主分类号 H01L33/32
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