发明名称 |
METHOD FOR MANUFACTURING VERTICAL STRUCTURE LIGHT EMITTING DIODE |
摘要 |
There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer. |
申请公布号 |
KR20070038272(A) |
申请公布日期 |
2007.04.10 |
申请号 |
KR20050093409 |
申请日期 |
2005.10.05 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
HWANG, HAE YOUN;RYU, YUNG HO;SHIM, DA MI;AHN, SE HWAN |
分类号 |
H01L33/32;H01L33/44 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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