P-LAYER OF A GAN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME,申请号KR20050093596-传众专利搜索

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发明名称	P-LAYER OF A GAN BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
摘要
申请公布号	KR20070038360(A)	申请公布日期	2007.04.10
申请号	KR20050093596	申请日期	2005.10.05
申请人	SEOUL OPTO DEVICE CO., LTD.	发明人	LEE, CHUNG HOON
分类号	H01L33/02	主分类号	H01L33/02
代理机构		代理人
主权项
地址

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