发明名称 |
Cobalt silicidation process for substrates with a silicon-germanium layer |
摘要 |
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.
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申请公布号 |
US7202122(B2) |
申请公布日期 |
2007.04.10 |
申请号 |
US20040710012 |
申请日期 |
2004.06.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG CHIEN-CHAO;YEO YEE-CHIA;WANG CHAO-HSIUNG;LIN CHUN-CHIEH;HU CHENMING |
分类号 |
H01L21/336;H01L21/285;H01L21/8238;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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