| 摘要 |
In a chamber ( 11 ), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber ( 11 ) is cleaned up using a gas containing NF<SUB>3</SUB>. A manometer ( 28 ) is prepared for the chamber ( 11 ). An end point of cleaning of the chamber ( 11 ) is detected by monitoring the pressure inside the chamber ( 11 ).
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