发明名称 СПОСОБ И СИСТЕМА ДЛЯ ТРАВЛЕНИЯ ДИФТОРИДОМ КСЕНОНАС ПОВЫШЕННОЙ ЭФФЕКТИВНОСТЬЮ
摘要 Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
申请公布号 RU2005129948(A) 申请公布日期 2007.04.10
申请号 RU20050129948 申请日期 2005.09.26
申请人 АйДиСи, ЭлЭлСи (US) 发明人 ФЛОЙД Филип Д. (US);КАММИНГЗ Уилль м Дж. (US)
分类号 B81B7/00;B81C99/00 主分类号 B81B7/00
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