发明名称 Semiconductor memory having tri-state driver device
摘要 A semiconductor memory having at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal. The invention also relates to a tri-state driver device for driving the control signal. Further, there is a method for operating a memory, in which the memory has a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal.
申请公布号 US7203102(B2) 申请公布日期 2007.04.10
申请号 US20040974019 申请日期 2004.10.27
申请人 INFINEON TECHNOLOGIES, AG 发明人 BROX MARTIN;HOUGHTON RUSSELL;SCHNEIDER HELMUT;KIESER SABINE
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项
地址