发明名称 |
Method of operating a semiconductor device and the semiconductor device |
摘要 |
A speed circuit path includes inverter chains that are controllable to operate in a slower, low sub-threshold leakage current mode or a faster, higher sub-threshold leakage current mode depending on an operating mode of the semiconductor device. A non-speed circuit path includes inverter chains that operate to reduce sub-threshold leakage current regardless of an operating mode of the semiconductor device.
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申请公布号 |
US7203097(B2) |
申请公布日期 |
2007.04.10 |
申请号 |
US20040005023 |
申请日期 |
2004.12.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SEOUK-KYU;KIM NAM-JONG;BAE IL-MAN;CHOI JONG-HYUN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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