发明名称 Method of operating a semiconductor device and the semiconductor device
摘要 A speed circuit path includes inverter chains that are controllable to operate in a slower, low sub-threshold leakage current mode or a faster, higher sub-threshold leakage current mode depending on an operating mode of the semiconductor device. A non-speed circuit path includes inverter chains that operate to reduce sub-threshold leakage current regardless of an operating mode of the semiconductor device.
申请公布号 US7203097(B2) 申请公布日期 2007.04.10
申请号 US20040005023 申请日期 2004.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI SEOUK-KYU;KIM NAM-JONG;BAE IL-MAN;CHOI JONG-HYUN
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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