III-V and II-VI compounds as template materials for growing germanium containing film on silicon

摘要

An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant formed on the intermediate layer. The intermediate layer comprises one of a combination of III-V elements and a combination of II-VI elements. The second lattice constant has a value that is approximately between the values of the first lattice constant and the third lattice constant.