| 摘要 |
On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.
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